是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TSOP, TSOP54,.46,32 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 最长访问时间: | 6 ns |
最大时钟频率 (fCLK): | 125 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | R-PDSO-G54 |
JESD-609代码: | e0 | 内存密度: | 67108864 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 4 |
端子数量: | 54 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX4 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP | 封装等效代码: | TSOP54,.46,32 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.125 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S640432D | SAMSUNG |
获取价格 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC/L10 | SAMSUNG |
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64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC/L1H | SAMSUNG |
获取价格 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC/L1L | SAMSUNG |
获取价格 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC/L75 | SAMSUNG |
获取价格 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC/L80 | SAMSUNG |
获取价格 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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K4S640432D-TC10T | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX4, 7ns, CMOS, PDSO54 |
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K4S640432D-TC1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
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K4S640432D-TC1HT | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54 |
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K4S640432D-TC1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
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