Datasheet > K1109L-J32-AQ3-R

K1109L-J32-AQ3-R

更新时间： 2024-02-13 03:47:11

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页数	文件大小	规格书
4页	173K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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K1109L-J32-AQ3-R 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

K1109L-J32-AQ3-R 数据手册

K1109

N-CHANNEL JFET

TYPICAL CHARACTERISTICS

Power Dissipatio vs Ambient Temperature

Drian Current vs Drain Source Voltage(J35)

600

100

0.15V

500

0.10V

0.05V

400

300

V_GS=0V

200

-0.05V

-0.10V

-0.15V

100

)

125

Ambient Temperature, T_A(

Drain Source Voltage,V_DS(V)

|YFS| - I_DSS

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

350

100

Zero-Gate Voltage Drain Current,I_DSS-uA

150

200

250

300

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

4 of 4

QW-R206-009.L

www.unisonic.com.tw

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