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JAN1N5638ATR

更新时间： 2024-01-09 09:37:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 161K
描述
Trans Voltage Suppressor Diode, 1500W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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JAN1N5638ATR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-13
包装说明：O-MALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.28
最大击穿电压：16.8 V最小击穿电压：15.2 V
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-202AAJESD-30 代码：O-MALF-W2
JESD-609代码：e0最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：METAL封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified参考标准：MIL-19500
最大重复峰值反向电压：13.6 V表面贴装：NO
技术：AVALANCHE端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JAN1N5638ATR 数据手册

 浏览型号JAN1N5638ATR的Datasheet PDF文件第1页浏览型号JAN1N5638ATR的Datasheet PDF文件第3页浏览型号JAN1N5638ATR的Datasheet PDF文件第4页浏览型号JAN1N5638ATR的Datasheet PDF文件第5页浏览型号JAN1N5638ATR的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
APPLICATIONS / BENEFITS  
¾ Protection from switching transients and induced RF  
¾ ESD & EFT protection per IEC 61000-4-2 and -4-4  
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
Class 1: 1N5629 to 1N5665A  
Class 2: 1N5629 to 1N5663A  
Class 3: 1N5629 to 1N5655A  
Class 4: 1N5629 to 1N5648A  
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
Class 1: 1N5629 to 1N5658A  
Class 2: 1N5629 to 1N5651A  
Class 3: 1N5629 to 1N5643A  
Class 4: 1N5629 to 1N5636A  
¾ Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:  
Class 2: 1N5629 to 1N5642A  
Class 3: 1N5629 to 1N5635A  
¾ Inherently radiation hard per Microsemi MicroNote 050  
MAXIMUM RATINGS  
¾ 1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (TL) 25oC (see Figs 1, 2, & 4)  
¾ Operating & Storage Temperatures: -65o to +175oC  
¾ THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110oC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25 mm  
¾ DC Power Dissipation*: 1 Watt at TL ≤ +125oC 3/8” (10 mm) from body (see derating in Fig 3 and note below)  
¾ Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25oC  
¾ Solder Temperatures: 260 o C for 10 s (maximum)  
MECHANICAL AND PACKAGING  
¾ CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass  
¾ FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026  
¾ POLARITY: Cathode connected to case and polarity indicated by diode symbol  
¾ MARKING: Part number and polarity diode symbol  
¾ WEIGHT: 1.4 grams. (Approx)  
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)  
¾ See package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated  
standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
T4-LDS-0096 Rev. 2 (101572)  
Page 2 of 6  
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