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JAN1N5518DUR-1 PDF预览

JAN1N5518DUR-1

更新时间: 2024-02-18 17:19:18
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管测试
页数 文件大小 规格书
3页 188K
描述
Low Voltage Surface Mount 500 mW Avalanche Diodes

JAN1N5518DUR-1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS, MLL34, MELF-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e0
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:3.3 V表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:1%
工作测试电流:20 mABase Number Matches:1

JAN1N5518DUR-1 数据手册

 浏览型号JAN1N5518DUR-1的Datasheet PDF文件第1页浏览型号JAN1N5518DUR-1的Datasheet PDF文件第2页 
IN5518BUR-1 thru 1N5546BUR-1  
(or MLL5518B-1 thru MLL5546B-1)  
Low Voltage Surface Mount  
500 mW Avalanche Diodes  
S C O T T S D A L E D I V I S I O N  
GRAPHS and CIRCUIT  
Noise density, (ND) is specified in  
microvolt-rms per square-root-hertz.  
Actual measurement is performed  
using a 1 kHz to 3 kHz frequency  
bandpass filter at a constant Zener test  
current (IZT) at 25oC ambient  
temperature.  
TEC  
TA  
TEC, End Cap Temperature (oC) or TA  
Ambient temperature on FR4 PC board  
FIGURE 2 Power Derating Curve  
FIGURE 1 Noise Density  
Measurement Circuit  
Zener Voltage VZ  
FIGURE 3 Capacitance vs. Zener Voltage (Typical)  
FIGURE 4  
Zener Diode Characteristics and Symbol Identification  
PACKAGE DIMENSIONS  
INCHES  
MILLIMETERS  
DIM  
A
MIN  
0.063  
0.130  
0.016  
MAX  
0.067  
0.146  
0.022  
MIN  
1.60  
3.30  
0.41  
MAX  
1.70  
3.70  
0.55  
B
PAD LAYOUT  
C
INCHES  
mm  
5.08  
1.40  
2.03  
A
B
C
.200  
.055  
.080  
Copyright 2003  
Microsemi  
Page 3  
10-31-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

JAN1N5518DUR-1 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N5518DUR-1 MICROSEMI

完全替代

Low Voltage Surface Mount 500 mW Avalanche Diodes
1N5518DUR-1 MICROSEMI

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