Datasheet > J108D26Z

J108D26Z

更新时间： 2024-02-17 20:53:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
12页	729K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

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技术参数
数据手册

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J108D26Z 技术参数

生命周期：	Transferred	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.63	配置：	SINGLE
最大漏源导通电阻：	8 Ω	FET 技术：	JUNCTION
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

J108D26Z 数据手册

MMBFJ108

J108

J109

J110

SOT-23

Mark: I8

TO-92

NOTE: Source & Drain

are interchangeable

N-Channel Switch

This device is designed for analog or digital switching applications where

very low on resistance is mandatory. Sourced from Process 58.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

- 25

V_GS

I_GF

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

J108-110

*MMBFJ108

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

125

350

2.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...12

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