生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.63 | 其他特性: | LOW INSERTION LOSS |
配置: | SINGLE | 最大漏源导通电阻: | 3 Ω |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 35 pF |
JEDEC-95代码: | TO-226AA | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
J105L18-1 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J105L18-2 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J105L-1TA | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J105L-1TR1 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J105L-2 | VISHAY | 暂无描述 |
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J105L-2TR1 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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