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IR21064

更新时间： 2024-01-13 20:18:46

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数	文件大小	规格书
22页	314K
描述
HIGH AND LOW SIDE DRIVER

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技术参数
数据手册

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IR21064 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SOP, SOP14,.25	Reach Compliance Code：	unknown
风险等级：	5.78	JESD-30 代码：	R-PDSO-G14
JESD-609代码：	e3	端子数量：	14
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP14,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	电源：	15 V
认证状态：	Not Qualified	子类别：	MOSFET Drivers
标称供电电压：	15 V	表面贴装：	YES
技术：	CMOS	温度等级：	AUTOMOTIVE
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
Base Number Matches：	1

IR21064 数据手册

Data Sheet No. PD60162 Rev. V

( )

IR2106(4)

HIGH AND LOW SIDE DRIVER

Features

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Packages

Floating channel designed for bootstrap operation

•

Gate drive supply range from 10 to 20V (IR2106(4))

Undervoltage lockout for both channels

3.3V, 5V and 15V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5V offset.

Lower di/dt gate driver for better noise immunity

Outputs in phase with inputs (IR2106)

•

8-Lead SOIC

8-Lead PDIP

•

14-Lead SOIC

14-Lead PDIP

•

Description

2106/2301//2108//2109/2302/2304Feature Comparison

The IR2106(4)(S) are high voltage,

high speed power MOSFET and

IGBT drivers with independent high

and low side referenced output chan-

nels. Proprietary HVIC and latch

immune CMOS technologies enable

ruggedized monolithic construction.

The logic input is compatible with

standard CMOS or LSTTL output,

down to 3.3V logic. The output driv-

Cross-

Input

logic

conduction

prevention

logic

Part

Dead-Time

Ground Pins

Ton/Toff

2106/2301

21064

2108

21084

2109/2302

21094

COM

VSS/COM

COM

VSS/COM

COM

HIN/LIN

none

220/200

Internal 540ns

Programmable 0.54~5µs

Internal 540ns

yes

IN/SD

yes

750/200

160/140

Programmable 0.54~5µs

VSS/COM

HIN/LIN

Internal 100ns

2304

COM

ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating

channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which

operates up to 600 volts.

Typical Connection

up to 600V

V_CC

HIN

LIN

V_B

V_S

HIN

LIN

LOAD

COM

IR2106

up to 600V

V_B

V_S

V_CC

HIN

V_CC

HIN

LIN

LOAD

LIN

(Refer to Lead Assignments for cor-

rect pin configuration). This/These

diagram(s) show electrical connec-

tions only. Please refer to our Appli-

cation Notes and DesignTips for

proper circuit board layout.

IR21064

V_SS

COM

V_SS

www.irf.com

12 3 4 5 6 7...22

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