5秒后页面跳转
IR2110-2 PDF预览

IR2110-2

更新时间: 2024-01-26 22:57:17
品牌 Logo 应用领域
其他 - ETC 驱动器接口集成电路光电二极管
页数 文件大小 规格书
15页 273K
描述
MOSFET Driver

IR2110-2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:LEAD FREE, PLASTIC, MS-001AA, DIP-16/14
针数:16Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.6高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDIP-T14
JESD-609代码:e3长度:20.13 mm
功能数量:1端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14/16,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):250电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:3.3 V标称供电电压:15 V
电源电压1-最大:520 V电源电压1-分钟:6 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.125 µs接通时间:0.15 µs
宽度:7.62 mmBase Number Matches:1

IR2110-2 数据手册

 浏览型号IR2110-2的Datasheet PDF文件第2页浏览型号IR2110-2的Datasheet PDF文件第3页浏览型号IR2110-2的Datasheet PDF文件第4页浏览型号IR2110-2的Datasheet PDF文件第5页浏览型号IR2110-2的Datasheet PDF文件第6页浏览型号IR2110-2的Datasheet PDF文件第7页 
Data Sheet No. PD60147-L  
IR2110/IR2113  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500V or +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
V
(IR2110)  
(IR2113) 600V max.  
500V max.  
OFFSET  
I +/-  
2A / 2A  
10 - 20V  
120 & 94 ns  
10 ns  
O
V
OUT  
t
(typ.)  
on/off  
Delay Matching  
Packages  
Description  
The IR2110/IR2113 are high voltage, high speed  
power MOSFET and IGBT drivers with independent  
high and low side referenced output channels. Pro-  
prietary HVIC and latch immune CMOS technologies  
enable ruggedized monolithic construction. Logic in-  
puts are compatible with standard CMOS or LSTTL  
output. The output drivers feature a high pulse  
current buffer stage designed for minimum driver  
cross-conduction. Propagation delays are matched  
to simplify use in high frequency applications. The  
floating channel can be used to drive an N-channel  
power MOSFET or IGBT in the high side configura-  
tion which operates up to 500 or 600 volts.  
14 Lead PDIP  
w/o Lead 4  
IR2110-1/IR2113-1  
14 Lead PDIP  
IR2110/IR2113  
16 Lead PDIP  
w/o leads 4 & 5  
IR2110-2/IR2113-2  
16 Lead SOIC  
IR2110S/IR2113S  
Typical Connection  
or 600V  
up to 500V  
HO  
VDD  
HIN  
SD  
VB  
VS  
VDD  
HIN  
SD  
TO  
LOAD  
LIN  
VSS  
VCC  
COM  
LO  
LIN  
VSS  
VCC  
www.irf.com  
1
Powered by ICminer.com Electronic-Library Service CopyRight 2003  

与IR2110-2相关器件

型号 品牌 描述 获取价格 数据表
IR2110-2PBF INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110C ETC MOSFET Driver

获取价格

IR2110E4 INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110E4PBF INFINEON Half Bridge Based MOSFET Driver, 2A, CMOS, PQCC16, LCC-18

获取价格

IR2110E4SCB INFINEON Half Bridge Based MOSFET Driver, 2A, CMOS, CQCC16, LCC-18/16

获取价格

IR2110E4SCBPBF INFINEON Half Bridge Based MOSFET Driver, 2A, CMOS, CQCC16, LCC-18/16

获取价格