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IDT71V3579S75PFGI PDF预览

IDT71V3579S75PFGI

更新时间: 2024-01-08 01:15:45
品牌 Logo 应用领域
艾迪悌 - IDT 计数器静态存储器
页数 文件大小 规格书
22页 522K
描述
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

IDT71V3579S75PFGI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:FBGA-165
针数:165Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.74最长访问时间:7.5 ns
其他特性:FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK):117 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:15 mm
内存密度:4718592 bit内存集成电路类型:CACHE SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:165
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TBGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.03 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.255 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:13 mmBase Number Matches:1

IDT71V3579S75PFGI 数据手册

 浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第2页浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第3页浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第4页浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第5页浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第6页浏览型号IDT71V3579S75PFGI的Datasheet PDF文件第7页 
IDT71V3577S  
IDT71V3579S  
IDT71V3577SA  
IDT71V3579SA  
128K X 36, 256K X 18  
3.3V Synchronous SRAMs  
3.3V I/O, Flow-Through Outputs  
Burst Counter, Single Cycle Deselect  
Description  
Features  
The IDT71V3577/79 are high-speed SRAMs organized as  
128Kx36/256Kx18.TheIDT71V3577/79SRAMs containwrite,data,  
address andcontrolregisters.Therearenoregisters inthedataoutput  
path(flow-througharchitecture).InternallogicallowstheSRAMtogen-  
erateaself-timedwritebaseduponadecisionwhichcanbeleftuntilthe  
endofthe write cycle.  
128K x 36, 256K x 18 memory configurations  
Supports fast access times:  
Commercial:  
– 7.5ns up to 117MHz clock frequency  
CommercialandIndustrial:  
– 8.0ns up to 100MHz clock frequency  
– 8.5ns up to 87MHz clock frequency  
LBO input selects interleaved or linear burst mode  
Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite  
enable (BWE), and byte writes (BWx)  
3.3V core power supply  
Power down controlled by ZZ input  
3.3V I/O  
Theburstmodefeatureoffersthehighestlevelofperformancetothe  
systemdesigner,astheIDT71V3577/79canprovidefourcyclesofdata  
forasingleaddress presentedtotheSRAM. Aninternalburstaddress  
counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe  
accesssequence.Thefirstcycleofoutputdatawillflow-throughfromthe  
arrayafteraclock-to-dataaccesstimedelayfromtherisingclockedgeof  
the same cycle. If burst mode operation is selected (ADV=LOW), the  
subsequentthreecyclesofoutputdatawillbeavailabletotheuseronthe  
next three rising clock edges. The order of these three addresses are  
definedbytheinternalburstcounterandtheLBO inputpin.  
Optional - Boundary Scan JTAG Interface (IEEE 1149.1  
compliant)  
Packaged in a JEDEC Standard 100-pin plastic thin quad  
The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance  
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm  
100-pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray  
(BGA) and a 165 fine pitch ball grid array (fBGA).  
flatpack(TQFP),119ballgridarray(BGA)and165finepitchball  
grid array  
PinDescriptionSummary  
A0-A17  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Synchronous  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
Chip Enable  
CE  
CS0, CS1  
OE  
Chip Selects  
Output Enable  
Global Write Enable  
Byte Write Enable  
Individual Byte Write Selects  
GW  
BWE  
(1)  
BW1, BW2, BW3, BW4  
CLK  
ADV  
ADSC  
ADSP  
LBO  
Clock  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Output  
Input  
Input  
I/O  
N/A  
Synchronous  
Synchronous  
Synchronous  
DC  
Burst Address Advance  
Address Status (Cache Controller)  
Address Status (Processor)  
Linear / Interleaved Burst Order  
Test Mode Select  
Test Data Input  
TMS  
TDI  
Synchronous  
Synchronous  
N/A  
TCK  
TDO  
Test Clock  
Test Data Output  
Synchronous  
Asynchronous  
Asynchronous  
Synchronous  
N/A  
JTAG Reset (Optional)  
Sleep Mode  
TRST  
ZZ  
I/O0-I/O31, I/OP1-I/OP4  
VDD, VDDQ  
Data Input / Output  
Core Power, I/O Power  
Ground  
Supply  
Supply  
VSS  
N/A  
NOTE:  
5280 tbl 01  
1. BW3 and BW4 are not applicable for the IDT71V3579.  
FEBRUARY 2005  
1
©2005IntegratedDeviceTechnology,Inc.  
DSC-5280/08  

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