Datasheet > ICL7667CBAZA

ICL7667CBAZA

更新时间： 2024-01-31 04:15:56

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器接口集成电路光电二极管
页数	文件大小	规格书
8页	195K
描述
Dual Power MOSFET Driver

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技术参数
数据手册

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ICL7667CBAZA 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Is Samacsys：	N	Base Number Matches：	1

ICL7667CBAZA 数据手册

ICL7667

Trans former Coupled Drive of MOSFETs

Transformers are often used for isolation between the logic

and control section and the power section of a switching

regulator. The high output drive capability of the ICL7667

enables it to directly drive such transformers. Figure 11

shows a typical transformer coupled drive circuit. PWM ICs

with either active high or active low output can be used in

this circuit, since any inversion required can be obtained by

reversing the windings on the secondaries.

= 1A

= 50V

= 375V

680pF

= 200V

630pF

Buffered Drivers for Multiple MOSFETs

212pF

In very high power applications which use a group of

MOSFETs in parallel, the input capacitance may be very large

and it can be difficult to charge and discharge quickly. Figure

13 shows a circuit which works very well with very large

-2

GATE CHARGE - Q (NANO-COULOMBS)

capacitance loads. When the input of the driver is zero, Q is

FIGURE 9. MOSFET GATE DYNAMIC CHARACTERISTICS

held in conduction by the lower half of the ICL7667 and Q is

Direct Drive of MOSFETs

clamped off by Q . When the input goes positive, Q is turned

Figure 11 shows interfaces between the ICL7667 and typical

switching regulator ICs. Note that unlike the DS0026, the

ICL7667 does not need a dropping resistor and speedup

capacitor between it and the regulator IC. The ICL7667, with

its high slew rate and high voltage drive can directly drive the

gate of the MOSFET. The SG1527 IC is the same as the

SG1525 IC, except that the outputs are inverted. This

inversion is needed since ICL7667 is an inverting buffer.

off and a current pulse is applied to the gate of Q by the

upper half of the ICL7667 through the transformer, T . After

about 20ns, T saturates and Q is held on by its own C

and the bootstrap circuit of C , D and R . This bootstrap

circuit may not be needed at frequencies greater than 10kHz

since the input capacitance of Q discharges slowly.

15V

+165V

IRF730

ICL7667

SG1527

GND

IRF730

-V

FIGURE 10A.

15V

+165V

IRF730

OUT

ICL7667

-V

TL494

GND

IRF730

+15V

FIGURE 10B.

FIGURE 10. DIRECT DRIVE OF MOSFET GATES

FN2853.5

April 4, 2006

1...3 4 567 8

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