2.5 mm x 3.2 mm Ceramic Package SMD TCXO
I537/I538/I737/I738 Series
Product Features:
Low Jitter, Non-PLL Based Output
Available in Both Clipped Sinewave and
HCMOS Output Levels
Applications:
3.20
Server & Storage
Sonet /SDH
4
3
802.11 / Wifi
Compatible with Leadfree Processing
T1/E1, T3/E3
Fibre Channel
2.50
1
2
Frequency
8.000 Mhz to 30 Mhz
Output Level
Clipped Sinewave
HCMOS
0.8 V p-p Min.
‘0’=0.5 VDC Max., ‘1’=0.8Vcc Min.
Output Load
Clipped Sinewave
HCMOS
20K Ohms / 10 pF
15pF
1.2 Max.
Duty Cycle (HCMOS)
50% ±10%
10 nS Max.
1
2
3
Rise / Fall Time
(HCMOS)
4
0.65
0.85
Frequency Stability
Vs Temperature
Vs Voltage
See Frequency Stability Table
± 0.3 ppm Max.
±.0.2 ppm Max.
Vs Load(5%)
2.40
Frequency Tolerance @ 25° C
± 1.0 ppm
3
2
Aging
4
1
± 1 ppm / Year Max.
2.0
Supply Voltage
Current
See Supply Voltage Table , tolerance ± 5%
1.3
2.0 mA Max. (Clipped Sinewave)
6.0 mA Max. (HCMOS)
1.2
Voltage Control
(I737/I738)
Operating
1.5 VDC ± 1.0 VDC, ± 5.0 ppm Min.
See Operating Temperature Table
-40° C to +85° C
Pin Connection
1
2
3
4
Vcontrol / N.C.
GND
Output
Storage
Vcc
Phase Noise
-86 dBc/Hz @ 10 Hz
-115 dBc/Hz @ 100 Hz
-138 dBc/Hz @ 1KHz
-146 dBc/Hz @ 10 Khz
Dimension Units: mm
Part Number Guide
Operating Temperature
7 = 0° C to +50° C
Sample Part Number: I537-1Q3-20.000 Mhz
Package
FrequencyStability vs Temperature
**N = ±1.0 ppm
Supply Voltage
3 = 3.3 V
Frequency
I537 (Clipped Sinewave TCXO)
I538 (HCMOS TCXO)
7 = 3.0 V
1 = 0° C to +70° C
**O = ±1.5 ppm
I737 (Clipped Sinewave TCVCXO)
I738 (HCMOS TCVCXO)
3 = -20° C to +70° C
2 = -40° C to +85° C
**P = ±2.0 ppm
2 = 2.7 V
- 20.000 MHz
Q = ±2.5 ppm
R = ±3.0 ppm
J = ±5.0 ppm
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.
** Not available for all temperature ranges.
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
02/09_A
Specifications subject to change without notice
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