Datasheet > HY62SF16401ASLM-85I

HY62SF16401ASLM-85I

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
9页	153K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48

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HY62SF16401A Series

256Kx16bit full CMOS SRAM

DESCRIPTION

FEATURES

The HY62SF16401A is a high speed, super low

power and 4Mbit full CMOS SRAM organized as

256K words by 16bits. The HY62SF16401A uses

high performance full CMOS process technology

and is designed for high speed and low power

circuit technology. It is particularly well-suited for

the high density low power system application.

This device has a data retention mode that

guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

Fully static operation and Tri-state output

TTL compatible inputs and outputs

Battery backup

-. 1.2V(min) data retention

Standard pin configuration

-. 48-ball uBGA

Product No.

Voltage

(V)

Speed (ns)

Operation

Current/Icc(mA)

Standby

Current(uA)

Temperature

(°C)

HY62SF16401A

HY62SF16401A-I 1.7~2.3

1.7~2.3

85/100/120

0~70

-40~85(I)

Note 1. Blank : Commercial, I : Industrial

2. Current value is max.

PIN CONNECTION

BLOCK DIAGRAM

ROW

DECODER

CS2

IO1

/LB /OE A0

I/O1

I/O8

I/O9

I/O16

/UB

/CS1

IO9

IO10 IO11

IO2 IO3

IO4 Vcc

Vss IO12 A17 A7

MEMORY ARRAY

256K x 16

Vcc IO13 NC A16 IO5 Vss

IO15 IO14 A14 A15 IO6 IO7

IO16 NC A12 A13 /WE IO8

A17

NC A8

A10 A11 NC

/CS1

CS2

/OE

/LB

uBGA

/UB

/WE

PIN DESCRIPTION

Pin Name

/CS1, CS2 Chip Select

/WE

/OE

/LB

Pin Function

Pin Name

I/O1~I/O16

A0~A17

Vcc

Pin Function

Data Inputs/Outputs

Address Inputs

Power(1.7~2.3)

Ground

Write Enable

Output Enable

Lower Byte Control(I/O1~I/O8)

Vss

/UB

Upper Byte Control(I/O9~I/O16) NC

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.07 / Jun.00

Hyundai Semiconductor

12 3 4 5 6 7...9

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