Datasheet > HY3503B

HY3503B

更新时间： 2024-02-22 02:53:32

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	693K
描述
N-Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY3503B 数据手册

HY3503P/B

N-Channel Enhancement Mode MOSFET

Features

Pin Description

30V/150A

R_{DS(ON)=2.8mΩ(typ.)@VGS = 10Vꢀ}

R_{DS(ON)=3.4mΩ(typ.) @VGS = 4.5V}

100% avalanche tested

Excellent CdV/dt effect decline

/HDGꢀ)UHH Device Available

TO-220FB-3L

TO-263-2L

Applications

Switching Application

Power Management for DC/DC

N-Channel MOSFET

Ordering and Marking Information

Package Code

P : TO-220FB-3L

B: TO-263-2L

HY3503

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G

Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate

Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-

Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to

this pr-oduct and/or to this document at any time without notice.

www.hymexa.com

V1.0

12 3 4 5 6 7...11

中文翻译

下载PDF

与HY3503B相关器件

型号	品牌	获取价格	描述	数据表
HY3503P	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3704B	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3704P	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3708B	HUAYI	获取价格	此器件为80V、6.4mΩ、TO-220FB-3L封装产品，采用Trench流片工艺，该器
HY3708P	HUAYI	获取价格	此器件为80V、6.4mΩ、TO-220FB-3L封装产品，采用Trench流片工艺，该器
HY3708W	HUAYI	获取价格	此器件为80V、6.4mΩ、TO-220FB-3L封装产品，采用Trench流片工艺，该器
HY3712B	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3712M	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3712P	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HY3712PM	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET