5秒后页面跳转
HY27UA161G1M-TCS PDF预览

HY27UA161G1M-TCS

更新时间: 2024-02-09 09:05:15
品牌 Logo 应用领域
海力士 - HYNIX 光电二极管内存集成电路
页数 文件大小 规格书
45页 675K
描述
Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48

HY27UA161G1M-TCS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.53
最长访问时间:12000 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8K
端子数量:48字数:67108864 words
字数代码:64000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:256 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3.3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:SLC NAND TYPE
宽度:12 mmBase Number Matches:1

HY27UA161G1M-TCS 数据手册

 浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第2页浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第3页浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第4页浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第5页浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第6页浏览型号HY27UA161G1M-TCS的Datasheet PDF文件第7页 
Preliminary  
HY27UA(08/16)1G1M Series  
HY27SA(08/16)1G1M Series  
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash  
Document Title  
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory  
Revision History  
No.  
0.0  
History  
Draft Date  
Remark  
1) Initial Draft  
Nov. 28. 2003 Preliminary  
Mar. 11. 2004 Preliminary  
0.1  
1) Add 1.8V Operation Product to Data sheet  
1) Change AC Characteristics  
- tWP(25ns->40ns), tWC(50ns->60ns),  
- tRP(30ns->40ns), tRC(50ns->60ns),  
- tREADID(35ns->45ns)  
0.2  
Apr. 29. 2004 Preliminary  
1) Add Errata (3V Product)  
tWH tREH  
Specification  
Relaxed value  
15  
20  
15  
20  
0.3  
May. 14. 2004 Preliminary  
2) Add Applicaiton Note  
Reset command must be issued when the controller writes data to  
another 512Mb.(i.e. When A26 is changed during program.)  
3) Modify the description of Device Operations  
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled  
(Enabled) (Page23)  
4) Add the description of System Interface Using /CE don’t care (Page40)  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 0.3 / May. 2004  
1

与HY27UA161G1M-TCS相关器件

型号 品牌 获取价格 描述 数据表
HY27UA161G1M-TEP HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
HY27UA161G1M-TES HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
HY27UA161G1M-TI HYNIX

获取价格

Flash, 64MX16, 35ns, PDSO48
HY27UA161G1M-TIS HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
HY27UA161G1M-TPC HYNIX

获取价格

Flash, 64MX16, 35ns, PDSO48
HY27UA161G1M-TPCB HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
HY27UA161G1M-TPCP HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
HY27UA161G1M-TPI HYNIX

获取价格

Flash, 64MX16, 35ns, PDSO48
HY27UA161G1M-VCP HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48
HY27UA161G1M-VEB HYNIX

获取价格

Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48