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HV758FB-G

更新时间： 2024-02-05 04:26:00
品牌 Logo 应用领域
超科 - SUPERTEX 驱动程序和接口接口集成电路脉冲脉冲发生器
页数 文件大小 规格书
7页 652K
描述
Quad High Speed 【90V 2.2A Ultrasound Pulser

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中文翻译

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HV758FB-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：BGA
包装说明：FBGA,针数：64
Reach Compliance Code：compliant风险等级：5.46
接口集成电路类型：INTERFACE CIRCUITJESD-30 代码：S-PBGA-B64
JESD-609代码：e3长度：8 mm
功能数量：1端子数量：64
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装形状：SQUARE封装形式：GRID ARRAY, FINE PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：2.45 mm最大供电电压：12.6 V
最小供电电压：7.5 V标称供电电压：12 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8 mmBase Number Matches：1

HV758FB-G 数据手册

 浏览型号HV758FB-G的Datasheet PDF文件第2页浏览型号HV758FB-G的Datasheet PDF文件第3页浏览型号HV758FB-G的Datasheet PDF文件第4页浏览型号HV758FB-G的Datasheet PDF文件第5页浏览型号HV758FB-G的Datasheet PDF文件第6页浏览型号HV758FB-G的Datasheet PDF文件第7页 
HV758  
Quad High Speed ±±9V ꢀ2ꢀA Ultrasound Pulser  
Features  
► HVCMOS technology for high performance  
► High density integration ultrasound transmitter  
► 0 to ±±0V output ꢀoltage  
► ±ꢁ2ꢁꢂ source and sink current in PW mode  
► ±ꢃ50mꢂ source and sink current in CW mode  
► Up to ꢁ0MHz operating frequency  
► Matched delay times  
► 12ꢁV to ꢃ20V CMOS logic interface  
► Built-in output drain bleed resistors  
General Description  
The Supertex HV7ꢃ5 is a four-channel, monolithic high  
ꢀoltage, high-speed pulse generator2 It is designed for medical  
ultrasound applications2 This high ꢀoltage and high-speed  
integrated circuit can also be used for other piezoelectric,  
capacitiꢀe or MEMS transducers in ultrasonic nondestructiꢀe  
detection and sonar ranger applications2  
The HV7ꢃ5 comprises a controller logic interface circuit, leꢀel  
translators, MOSFET gate driꢀes and high current power P-  
channel and N-channel MOSFETs as the output stage for  
each channel2  
The output current limit can be set to one of four leꢀels by  
using two mode control inputs2 The output stages of each  
channel are designed to proꢀide peak output currents oꢀer  
±ꢁ2ꢃꢂ when in mode 4, with up to 150V swings2 When in  
mode 1, the output stages reduce the peak current to ±ꢃ50mꢂ  
for CW mode operation, which reduces the power dissipation  
of the IC2 The power MOSFET gate driꢀers are supplied by  
two floating 10VDC power supplies referenced to V and V 2  
This direct coupling topology of the gate driꢀers not PoPnly saꢀNeNs  
two high ꢀoltage capacitors per channel, but also makes the  
PCB layout easier2  
Application  
► Medical ultrasound imaging  
► Piezoelectric transducer driꢀers  
► NDT ultrasound transmission  
► Pulse waꢀeform generator  
Typical Application Circuit  
VPP -10V  
C4  
+125 to 323V  
+10V  
+±0V  
0 to +±0V  
Cꢃ  
Cꢁ  
C3  
C1  
VLL  
VDD  
VSUB  
VPF  
VPP  
SUB  
OTP  
EN_PWR  
RGND  
TXP1  
TXN1  
EN  
MC0  
MC1  
RP1  
Level  
Translator  
P-Driver  
N-Driver  
PIN1  
D1  
Dꢁ  
HVOUT1  
+125 to 323V  
Logic  
Level  
Translator  
NIN1  
RN1  
C6  
X1  
RGND  
1 of 4 Channels  
VNN  
VNF  
GREF  
VSS  
HV758  
C7  
VNN +10V  
0 to -±0V  
1234567

中文翻译

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