Datasheet > HT0808-15A

HT0808-15A

更新时间： 2022-02-26 12:48:22

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HONGFA		/
页数	文件大小	规格书
8页	1282K
描述
GaN Hybrid Power Amplifier

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HT0808-15A 数据手册

HT0808-15A

GaN Hybrid Power Amplifier

Product Features

Applications

• GaN on SiC HEMT

• RF Sub-Systems

• Base Station

• Repeater

• 4G/LTE system

• Small cell

• 2-Stage Amplifier 50ohms Matching

• Surface Mount Hybrid Type

• Small Size & Mass

• High Efficiency

Package Type : NP-1EL

Description

The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz

This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,

High power density.

Electrical Specifications @ Vds =28V, Ta=25℃

PARAMETER

Frequency Range

Power Gain

UNIT

MIN

TYP

MAX

CONDITION

MHz

869

894

ZS = ZL = 50 ohm

Gain Flatness

0.6

-10

Amp : Idq1 = 50mA

Idq2 = 105mA

Input Return Loss

Pout @ Average

Pout @ Psat

-6.0

dBm

40.8

41.5

-32

-53

Pulse Width=50us, 10%Duty

Non DPD

-27

ACLR @ BW 10MHz

LTE (PAPR 7.5dB)

dBc

With DPD

Drain Efficiency

Total Ids

Pout @ Average

280

-3.0

-2.0

Gate Bias (Vgs1 and Vgs2)

Main Bias(Vds)

Supply Voltage

Caution

The drain voltage must be supplied to the device after the gate voltage is supplied

Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies

Turn off : Turn off the Drain Voltage and last turn off the Gate voltage

Note

1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz

LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)

2. HT Series have internal DC blocking capacitors at the RF input and output ports

Mechanical Specifications

PARAMETER

Mass

UNIT

TYP

REMARK

Dimension

㎜

20.5 x 15 x 3.5

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com

US Facility : 919-677-8780 / sales@rfhicusa.com

All specifications may change without notice

Version 1.0

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