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HSD8M64D4B

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
11页 85K
描述
Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

HSD8M64D4B 数据手册

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HANBit  
HSD8M64D4B  
Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks,  
4K Ref., 3.3V  
Part No. HSD8M64D4B  
GENERAL DESCRIPTION  
The HSD8M64D4B is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of  
four CMOS 2M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate.  
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64D4B  
is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous  
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range  
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high  
performance memory system applications All module components may be powered from a single 3.3V DC power supply  
and all inputs and outputs are LVTTL-compatible.  
FEATURES  
Part Identification  
HSD8M64D4B-10 : 100MHz ( CL=2)  
HSD8M64D4B-10L : 100MHz ( CL=3)  
HSD8M64D4B- 13 : 133MHz ( CL=3)  
Burst mode operation  
Auto & self refresh capability (4096 Cycles/64ms)  
LVTTL compatible inputs and outputs  
Single 3.3V ±0.3V power supply  
MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
JEDEC standard  
All inputs are sampled at the positive going edge of the system clock  
The used device is2Mx16Bitx4Banks SDRAM  
URL:www.hbe.co.kr  
HANBit Electronics Co.,Ltd  
REV.1.0 (August.2002)  
1

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