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HMC342LC4 PDF预览

HMC342LC4

更新时间: 2024-01-27 23:38:29
品牌 Logo 应用领域
HITTITE 放大器射频微波
页数 文件大小 规格书
6页 303K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz

HMC342LC4 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LCC24,.16SQ,20Reach Compliance Code:unknown
风险等级:5.67安装特点:SURFACE MOUNT
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:CERAMIC封装等效代码:LCC24,.16SQ,20
电源:3 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAASBase Number Matches:1

HMC342LC4 数据手册

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HMC342LC4  
v00.1104  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 13 - 25 GHz  
5
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 5 - 14,  
No connection required. These pins may be connected to  
RF/DC ground without affecting performance.  
N/C  
18 - 20, 22 - 24  
Package base has an exposed metal ground that must  
also be connected to RF/DC ground.  
2, 4, 15, 17  
GND  
This pin is AC coupled and matched to 50 Ohms from  
13 - 25 GHz.  
3
RFIN  
This pin is AC coupled and matched to 50 Ohms from  
13 - 25 GHz.  
16  
RFOUT  
Power Supply Voltage for the amplifier. External bypass  
capacitors of 100 pF, 1000pF, and 2.2 μF are required.  
21  
Vdd  
Application Circuit  
Component Value  
C1  
C2  
C3  
100 pF  
1,000 pF  
2.2 μF  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 88  

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