Datasheet > HMC224MS8_06

HMC224MS8_06

更新时间： 2022-04-23 23:00:11

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HMC224MS8_06 数据手册

HMC224MS8 / 224MS8E

v02.0805

GaAs MMIC T/R SWITCH

5.0 - 6.0 GHz

Typical Application Circuit

Notes:

1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic

gates and to pin 4 of the RF switch.

2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface.

3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at

lower RF power capability) at bias voltages down to +3V.

4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be

placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances.

5. DC Blocking capacitors are not required for each RF port.

6. Evaluation PCB available.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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