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HMC1099PM5ETR PDF预览

HMC1099PM5ETR

更新时间: 2024-01-28 05:54:40
品牌 Logo 应用领域
亚德诺 - ADI 高功率电源射频微波
页数 文件大小 规格书
18页 330K
描述
HMC1099PM5ETR

HMC1099PM5ETR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC32,.2SQ,20
针数:32Reach Compliance Code:compliant
风险等级:5.65特性阻抗:50 Ω
构造:COMPONENT增益:16.5 dB
最大输入功率 (CW):33 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:32
最大工作频率:1100 MHz最小工作频率:10 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC32,.2SQ,20
电源:28 V射频/微波设备类型:WIDE BAND HIGH POWER
最大压摆率:100 mA表面贴装:YES
技术:GAN最大电压驻波比:6
Base Number Matches:1

HMC1099PM5ETR 数据手册

 浏览型号HMC1099PM5ETR的Datasheet PDF文件第2页浏览型号HMC1099PM5ETR的Datasheet PDF文件第3页浏览型号HMC1099PM5ETR的Datasheet PDF文件第4页浏览型号HMC1099PM5ETR的Datasheet PDF文件第5页浏览型号HMC1099PM5ETR的Datasheet PDF文件第6页浏览型号HMC1099PM5ETR的Datasheet PDF文件第7页 
10 W (40 dBm), 0.01 GHz to 1.1 GHz,  
GaN Power Amplifier  
Data Sheet  
HMC1099PM5E  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
High small signal gain: 20 dB typical  
POUT: 41.5 dBm typical at PIN = 27 dBm  
High PAE: 60% typical at PIN = 27 dBm  
Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all  
frequencies  
Supply voltage: VDD = 28 V at a quiescent current of 100 mA  
Internal prematching  
1
2
3
4
5
6
7
8
GND  
NIC  
NIC  
24 GND  
23 NIC  
22 NIC  
HMC1099PM5E  
RFOUT/V  
RFOUT/V  
NIC  
21  
20  
19  
18  
RFIN/V  
DD  
DD  
GG  
RFIN/V  
GG  
NIC  
NIC  
NIC  
Simple and compact external tuning for optimal  
performance  
17 GND  
GND  
PACKAGE  
BASE  
5 mm × 5 mm, 32-lead LFCSP  
APPLICATIONS  
NIC = NO INTERNAL CONNECTION. THESE PINS  
ARE NOT CONNECTED INTERNALLY.  
Extended battery operation for public mobile radios  
Power amplifier stage for wireless infrastructures  
Test and measurement equipment  
Figure 1.  
Commercial and military radars  
General-purpose transmitter amplification  
GENERAL DESCRIPTION  
The HMC1099PM5E is a gallium nitride (GaN), broadband  
power amplifier that delivers 10 W (40 dBm) with up to 60%  
power added efficiency (PAE) across an instantaneous  
bandwidth of 0.01 GHz to 1.1 GHz, at an input power (PIN) of  
27 dBm. The gain flatness is between 0.5 dB to 2 dB typical at  
small signal levels.  
The HMC1099PM5E is ideal for pulsed or continuous wave  
(CW) applications, such as wireless infrastructure, radars,  
public mobile radios, and general-purpose amplification.  
The HMC1099PM5E amplifier is externally tuned using low  
cost, surface-mount components and is available in a compact  
LFCSP.  
Multifunction pin names may be referenced by their relevant  
function only.  
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2018 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 

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