10 W (40 dBm), 0.01 GHz to 1.1 GHz,
GaN Power Amplifier
Data Sheet
HMC1099PM5E
FEATURES
FUNCTIONAL BLOCK DIAGRAM
High small signal gain: 20 dB typical
POUT: 41.5 dBm typical at PIN = 27 dBm
High PAE: 60% typical at PIN = 27 dBm
Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all
frequencies
Supply voltage: VDD = 28 V at a quiescent current of 100 mA
Internal prematching
1
2
3
4
5
6
7
8
GND
NIC
NIC
24 GND
23 NIC
22 NIC
HMC1099PM5E
RFOUT/V
RFOUT/V
NIC
21
20
19
18
RFIN/V
DD
DD
GG
RFIN/V
GG
NIC
NIC
NIC
Simple and compact external tuning for optimal
performance
17 GND
GND
PACKAGE
BASE
5 mm × 5 mm, 32-lead LFCSP
APPLICATIONS
NIC = NO INTERNAL CONNECTION. THESE PINS
ARE NOT CONNECTED INTERNALLY.
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Figure 1.
Commercial and military radars
General-purpose transmitter amplification
GENERAL DESCRIPTION
The HMC1099PM5E is a gallium nitride (GaN), broadband
power amplifier that delivers 10 W (40 dBm) with up to 60%
power added efficiency (PAE) across an instantaneous
bandwidth of 0.01 GHz to 1.1 GHz, at an input power (PIN) of
27 dBm. The gain flatness is between 0.5 dB to 2 dB typical at
small signal levels.
The HMC1099PM5E is ideal for pulsed or continuous wave
(CW) applications, such as wireless infrastructure, radars,
public mobile radios, and general-purpose amplification.
The HMC1099PM5E amplifier is externally tuned using low
cost, surface-mount components and is available in a compact
LFCSP.
Multifunction pin names may be referenced by their relevant
function only.
Rev. B
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