Datasheet > HMC1049LP5E_18

HMC1049LP5E_18

更新时间： 2022-02-26 12:50:10

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
14页	332K
描述
Low Noise Amplifier

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HMC1049LP5E_18 数据手册

GaAs, pHEMT, MMIC, Low Noise

Amplifier, 0.3 GHz to 20 GHz

Data Sheet

HMC1049LP5E

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Low noise figure: 1.8 dB

P1dB output power: 14.5 dBm

P_SAToutput power: 17.5 dBm

NC 1

24 NC

High gain: 15 dB

Output IP3: 29 dBm

HMC1049LP5E

NC 3

22 GND

Supply voltage: V_DD= 7 V at 70 mA

50 Ω matched input/output (I/O)

32-lead, 5 mm × 5 mm LFCSP package: 25 mm²

GND 4

21 RFOUT/V

RFIN

APPLICATIONS

NC 8

17 NC

Test instrumentation

High linearity microwave radios

VSAT and SATCOM

Figure 1.

Military and space

GENERAL DESCRIPTION

The HMC1049LP5E is a GaAs MMIC low noise amplifier

(LNA) that operates between 0.3 GHz and 20 GHz. This LNA

provides 15 dB of small signal gain, 1.8 dB noise figure, and an

IP3 output of 29 dBm, yet requires only 70 mA from a 7 V

supply. The P1dB output power of 14.5 dBm enables the LNA to

function as a local oscillator (LO) driver for balanced, I/Q, or

image rejection mixers. V_DDcan also be applied to Pin 21,

although Pin 21 requires a bias tee with V_DD= 4 V. The

HMC1049LP5E amplifier I/Os are internally matched to 50 Ω,

and the device is supplied in a compact, leadless 5 mm × 5 mm

LFCSP package.

Rev. B

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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