July 2005
BVDSS = 600 V
DS(on) typ = 4.0 Ω
R
HFD2N60 / HFU2N60
600V N-Channel MOSFET
ID = 1.8 A
D-PAK
I-PAK
2
FEATURES
1
1
3
2
3
Originative New Design
HFD2N60
HFU2N60
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
1.8
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
1.1
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
7.2
A
Gate-Source Voltage
±30
150
1.8
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.4
mJ
V/ns
5.5
Power Dissipation (TA=25 °C) *
Power Dissipation (TC = 25℃)
2.5
44
W
W
- Derate above 25℃
Operating and Storage Temperature Range
0.35
W/℃
℃
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
2.87
Junction-to-Ambient*
Junction-to-Ambient
50
℃/W
110
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,July 2005