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HERAF1001G PDF预览

HERAF1001G

更新时间： 2024-02-10 18:19:10
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管功效局域网
页数 文件大小 规格书
2页 205K
描述
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers

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中文翻译

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HERAF1001G 技术参数

生命周期：Active包装说明：GREEN, PLASTIC, ITO-220AC, 2 PIN
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.21
Is Samacsys：N其他特性：FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED
应用：EFFICIENCY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-220AC
JESD-30 代码：R-PSFM-T2JESD-609代码：e3
最大非重复峰值正向电流：150 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大重复峰值反向电压：50 V
最大反向恢复时间：0.05 µs表面贴装：NO
端子面层：PURE TIN端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

HERAF1001G 数据手册

 浏览型号HERAF1001G的Datasheet PDF文件第2页 
HERAF1001G - HERAF1008G  
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers  
ITO-220AC  
.185(4.7)  
.173(4.4)  
.406(10.3)  
.390(9.90)  
.124(3.16)  
.118(3.00)  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
Features  
.606(15.5)  
.583(14.8)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated chip junction.  
High efficiency, Low VF  
High current capability  
.063(1.6)  
MAX  
High reliability  
.161(4.1)  
.146(3.7)  
High surge current capability  
For use in low voltage, high frequency inventor, free  
wheeling, and polarity protection application.  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
.055(1.4)  
.043(1.1)  
.071(1.8)  
MAX  
.030(0.76)  
.020(0.50)  
.035(0.9)  
.020(0.5)  
Mechanical Data  
2
ꢀ
ꢀ
ꢀ
Cases: ITO-220AC molded plastic  
Epoxy: UL 94V0 rate flame retardant  
Terminals: Pure tin plated, lead free solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: As marked  
.100(2.55)  
PIN 1  
PIN 2  
Case Positive  
.100(2.55)  
CASE  
ꢀ
ꢀ
Dimensions in inches and (millimeters)  
High temperature soldering guaranteed:  
o
260 C/10 seconds 0.25”,(6.35mm) from case.  
ꢀ
ꢀ
Mounting torque : 5 in – 1bs. max.  
Weight: 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF  
Symbol  
Type Number  
Units  
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50 100 200 300 400 600 800 1000  
35 70 140 210 280 420 560 700  
50 100 200 300 400 600 800 1000  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
o
I(AV)  
10  
A
Current @TC =100 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
VF  
150  
A
V
Maximum Instantaneous Forward Voltage  
@10.0A  
1.0  
1.3  
1.7  
Maximum DC Reverse Current  
o
@TA=25 C at Rated DC Blocking Voltage  
IR  
10  
uA  
uA  
o
@ TA=125 C  
400  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Trr  
Cj  
50  
80  
80  
60  
nS  
pF  
o
RθJC  
TJ  
2.0  
C/W  
o
-65 to +150  
-65 to +150  
C
o
Storage Temperature Range  
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.  
Notes:  
Version: A06  
12

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