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HER1005D PDF预览

HER1005D

更新时间: 2024-02-24 13:34:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 5115K
描述
10Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers

HER1005D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
湿度敏感等级:1最大非重复峰值正向电流:125 A
最高工作温度:150 °C最大输出电流:10 A
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

HER1005D 数据手册

 浏览型号HER1005D的Datasheet PDF文件第2页 
F60UP30DN  
F60UP30DN  
Pb Free Plating Product  
60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers  
TO-3PB(TO-3PN)  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
Anode  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
Absolute Maximum Ratings  
Parameter  
Symbol  
Test Conditions  
Values  
Units  
Repetitive peak reverse voltage  
VRRM  
300  
V
Continuous forward current  
IF(AV)  
60  
Tc =110°C  
A
Single pulse forward current  
Maximum repetitive forward current  
Operating junction  
IFSM  
IFRM  
Tj  
600  
150  
175  
Tc =25°C  
Square wave, 20kHZ  
°C  
°C  
Storage temperatures  
Tstg  
-55 to +175  
Electrical characteristics (Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
VBR,  
Test Conditions  
Min  
Typ.  
Max.  
Units  
Breakdown voltage  
Blocking voltage  
IR=100µA  
300  
VR  
IF=30A  
0.96  
0.85  
1.20  
1.00  
10  
V
Forward voltage  
(Per Diode)  
VF  
IF=30A, Tj =125°C  
VR= VRRM  
Reverse leakage  
IR  
µA  
current(Per Diode)  
100  
Tj=150°C, VR=300V  
IF=0.5A, IR=1A, IRR=0.25A  
35  
26  
45  
40  
Reverse recovery  
time(Per Diode)  
trr  
ns  
IF=1A,VR=30V, di/dt =200A/us  
Thermal characteristics  
Paramter  
Symbol  
Typ  
0.8  
Units  
/W  
Junction-to-Case  
RθJC  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com.tw/  

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