HEDS-5500, HEDS-6500 and HEDS-9000, 9100, 9200 Series
Motion Sensing Products, Optical Encoder Modules
Reliability Data
Description
Failure Rate Prediction
The following cumulative test results have been obtained
from testing performed at Avago Technologies in accord-
ance with the latest revision of MIL- STD-883.
The failure rate of semiconductor devices is determined
by the junction temperature of the device. The relation-
ship between ambient temperature and actual junction
temperature is given by the following:
Avago tests parts at the absolute maximum rated con-
ditions recommended for the device. The actual per-
formance you obtain from Avago parts depends on the
electrical and environmental characteristics of your ap-
plication but will probably be better than the perform-
ance outlined in Table ꢀ.
TJ (°C) = TA (°C) + θJA PAVG
where
TA = ambient temperature in °C
θ
JA = thermal resistance of
junction-to-ambient in °C/watt
PAVG = average power dissipated in watts
The estimated MTBF and failure rate at temperatures
lower than the actual stress temperature can be deter-
mined by using an Arrhenius model for temperature ac-
celeration. Results of such calculations are shown in the
table on the following page using an activation energy of
0.43 eV (reference MIL-HDBK-2ꢀ7).
Table 1. Life Tests
Demonstrated Performance
Point Typical Performance
Stress Test
Conditions
Total
Device Hrs.
Units
Tested
Total
Failed
Failure Rate
(% /1K Hours)
Test Name
MTBF
High Temperature
Operating Life
VCC = 5.5 V,
VA = VB = 3.5 V
TA = ꢀ00°C
ꢀ,405,000
ꢀ,405
2
702,500
0.ꢀ42
ꢀ000 hours
Temperature
Humidity
Operating Life
VCC = 5.5 V
VA = VB = 3.5 V
ꢀ,000 hours
TA = 85°C
ꢀ,495,000
ꢀ,495
ꢀ0
ꢀ49,500
0.669
RH = 85%
ꢀ