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HE8550-D-T92-B PDF预览

HE8550-D-T92-B

更新时间: 2024-01-10 05:56:44
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管
页数 文件大小 规格书
4页 56K
描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

HE8550-D-T92-B 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.62
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):190 MHzBase Number Matches:1

HE8550-D-T92-B 数据手册

 浏览型号HE8550-D-T92-B的Datasheet PDF文件第1页浏览型号HE8550-D-T92-B的Datasheet PDF文件第2页浏览型号HE8550-D-T92-B的Datasheet PDF文件第4页 
HE8550  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
DC Current Gain  
VCE=-1V  
103  
102  
-0.5  
-0.4  
IB=-3.0mA  
-0.3  
-0.2  
IB=-2.5mA  
IB=-2.0mA  
IB=-1.5mA  
101  
100  
IB=-1.0mA  
-0.1  
0
IB=-0.5mA  
-10-1  
-100  
-101  
-102  
-103  
-0  
-0.4  
-0.8 -1.2 -1.6 -2.0  
Collector-Emitter Voltage ( V)  
Collector Current, IC (mA)  
Base-Emitter on Voltage  
VCE=-1V  
Saturation Voltage  
IC=10*IB  
-103  
-102  
-104  
-103  
VBE(SAT)  
-101  
-100  
-102  
-101  
VCE(SAT)  
-10-1  
-100  
-101  
-102  
-103  
0
-0.2 -0.4  
-0.6  
-0.8 -1.0  
Collector Curren,t IC (mA)  
Base-Emitter Voltage (V)  
Current Gain-Bandwidth Product  
VCE=-10V  
Collector Output Capacitance  
f=1MHz  
103  
102  
103  
102  
IE=0  
101  
100  
101  
100  
-100  
-101  
-102  
-103  
-100  
-101  
-102  
-103  
Collector Current, IC (mA)  
Collector-Base Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-031,B  
www.unisonic.com.tw  

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