Datasheet > HCD65R600S

HCD65R600S

更新时间： 2022-02-26 12:42:04

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	265K
描述
650V N-Channel Super Junction MOSFET

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数据手册

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HCD65R600S 数据手册

June 2015

BV_DSS= 650 V

R_{DS(on) typ}= 0.54 ȍ

HCD65R600S / HCU65R600S

650V N-Channel Super Junction MOSFET

I_D= 7.3 A

D-PAK

I-PAK

FEATURES

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 16 nC (Typ.)

Extended Safe Operating Area

Lower R_DS(ON)ꢀꢁꢁꢂꢃꢄꢅꢁȍꢁꢆ7\Sꢃꢇꢁ#9_GS=10V

100% Avalanche Tested

HCD65R600S HCU65R600S

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25୅ unless otherwise specified

Symbol

V_DSS

Parameter

Value

Units

Drain-Source Voltage

Drain Current

650

7.3

– Continuous (T_C= 25୅)

– Continuous (T_C= 100୅)

I_D

Drain Current

4.6

(Note 1)

I_DM

Drain Current

– Pulsed

V_GS

E_AS

I_AR

Gate-Source Voltage

ρ20

150

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

2.0

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25୅)*

0.5

V/ns

2.5

P_D

Power Dissipation (T_C= 25୅)

- Derate above 25୅

0.55

-55 to +150

W/୅

୅

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

୅

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_șJC

R_șJA

Junction-to-Case

1.8

Junction-to-Ambient*

Junction-to-Ambient

୅/W

110

* When mounted on the minimum pad size recommended (PCB Mount)

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12 3 4 5 6 7 8

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