Datasheet > H0500KC25N

H0500KC25N

更新时间： 2023-01-03 05:18:48

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
15页	179K
描述
Silicon Controlled Rectifier, 280 A, 2500 V, SYMMETRICAL GTO SCR

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H0500KC25N 数据手册

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0500KC25#

Characteristics

UNITS

Parameter

MIN

TYP MAX TEST CONDITIONS

V_TM

I_L

Maximum peak on-state voltage

Latching current

2.8

3.2 I_G=2A, I_T=500A

T_j=25°C

I_H

Holding current

T_j=25°C

dv/dt_crCritical rate of rise of off-state voltage

800

V_D=80%V_DRM, V_GR=-2V

Rated V_DRM, V_GR=-2V

Rated V_RRM

V/µs

I_DM

Peak off state current

I_RM

Peak reverse current

I_GKM

Peak negative gate leakage current

200 V_GR=-16V

0.9

0.8

0.7

1.7

0.6

0.1

T_j=-40°C

T_j=25°C

T_j=125°C

V_GT

Gate trigger voltage

Gate trigger current

Ω

V_D=25V, R_L=25m

6.0 T_j=-40°C

T_j=25°C

0.5 T_j=125°C

I_GT

V_D=50%V_DRM, I_TGQ=500A, I_GM=30A, di_G/dt=15A/µs

T_j=25°C, di/dt=300A/µs, (10%I_GMto 90%V_D)

µs

t_d

t_gt

t_f

Delay time

Turn-on time

Fall time

0.5

2.0

0.5

3.0 Conditions as for t_d, (10%I_GMto 10%V_D)

µs

V_D=80%V_DRM, I_TGQ=500A, C_S=1µF,

di_GQ/dt=40A/µs, V_GR=-16V, (90%I_TGQto 10%IV_D)

t_gq

Turn-off time

5.0

6.0 Conditions as for t_f, (10%I_GQto 10%I_TGQ

Conditions as for t_f

600 Conditions as for t_f

)

µs

I_gq

Turn-off gate current

Turn-off gate charge

Tail time

180

Q_gq

t_tail

t_gw

500

µC

µs

Conditions as for t_f, (10%I_TGQto I_TGQ<1A)

Conditions as for t_f

Gate off-time (see note 3)

µs

0.065 Double side cooled

0.24 Cathode side cooled

0.09 Anode side cooled

9.0 (see note 2)

K/W

R_thJK

Thermal resistance junction to sink

Mounting force

Weight

4.5

W_t

120

Notes:-

1) Unless otherwise indicated T_j=125^oC.

2) For other clamping forces, consult factory.

3) The gate off-time is the period during which the gate circuit is

required to remain low impedance to allow for the passage

of tail current.

Data Sheet. Type H0500KC25# Issue 2

Page 2 of 15

August, 2004

123 4 5 6 7...15

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