Datasheet > H0500KC25M

H0500KC25M

更新时间： 2024-01-13 00:10:53

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
15页	179K
描述
Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 1000V V(RRM), 1 Element

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H0500KC25M 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.75	Is Samacsys：	N
配置：	SINGLE	最大直流栅极触发电流：	1500 mA
JESD-30 代码：	O-CXDB-X4	元件数量：	1
端子数量：	4	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	ROUND	封装形式：	DISK BUTTON
认证状态：	Not Qualified	最大均方根通态电流：	280 A
断态重复峰值电压：	2500 V	重复峰值反向电压：	1000 V
表面贴装：	YES	端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED	触发设备类型：	SYMMETRICAL GTO SCR
Base Number Matches：	1

H0500KC25M 数据手册

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0500KC25#

2.5 Gate trigger characteristics.

These are measured by slowly ramping up the gate current and monitoring the transition of anode current

and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction

temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,

however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable

junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when considering

forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest

junction temperature start-up condition.

Feedback

Anode current

0.9V_AK

Not to scale

Current-

sence

Gate current

0.1I_A

I_GT

Anode-Cathode

Voltage

DUT

Gate-drive

Diagram 7, Gate trigger circuit and waveforms.

2.6 Turn-on characteristics

The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a

circulating current in T_x, resulting in V_Dappearing across C_c/L_c. When the test device is fired C_c/L_c

discharges through DUT and commutates T_xoff, as pulse from C_c/L_cdecays the constant current source

continues to supply a fixed current to DUT. Changing value of C_c& L_callows adjustment of I_TMand di/dt

respectively, V_Dand i are also adjustable.

DUT

Gate-drive

Diagram 8, Turn-on test circuit of FT40.

The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate

circuit conditions I_GM& I_Gare fully adjustable, I_GMduration 10µs.

di_G/dt

I_G

I_GM

t_d

t_r

di/dt

I_TM

V_D

V_D=V_DM

t_gt

E_onintegral

period

Diagram 9, Turn-on wave-diagrams.

Data Sheet. Type H0500KC25# Issue 2

Page 6 of 15

August, 2004

1...3 4 567 8 9...15

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