ISSUED DATE :2005/10/06
REVISED DATE :
GTM
CORPORATION
GJ1182
P N P S I L I C O N E P I T AX I A L P L A N A R T R A N S I S T O R
Description
The GJ1182 is designed for medium power amplifier applications.
Features
ԦLow collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Package Dimensions
TO-252
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Min.
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
0.50
2.20
0.45
0
2.30 REF.
0.90
5.40
0.80
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
+150
-55~+150
Unit
Junction Temperature
к
к
V
V
V
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
CBO
-40
-32
-5
-2
-3
VCEO
V
EBO
I
I
C
C
A
A
Collector Current (Pulse, Pw=100ms)
Total Power Dissipation(T
C
=25к)
PD
10
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
V
Test Conditions
BVCBO
BVCEO
BVEBO
-40
-32
-5
-
-
-
-
-
-
-
-
-
-
-
I
I
I
V
V
C
=-50uA , I
E
=0
=0
=0
=0
=0
=-200mA
V
V
uA
uA
mV
C
=-1mA, I
B
E
=-50uA ,IC
CB=-20V, I
I
I
CBO
-1
-1
-800
390
-
E
EBO
EB=-4V, I
C
*VCE(sat)
*hFE
fT
-500
-
100
I
C
=-2A, I
CE=-3V, I
B
82
-
V
V
V
C
=-500mA
=-500mA, f=100MHz
CB=-10V, IE=0, f=1MHz
MHz
pF
CE=-5V, I
C
Cob
-
50
-
* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%
Classification Of hFE
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
GJ1182
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