Datasheet > GJ08P10

GJ08P10

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	276K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GJ08P10 数据手册

Pb Free Plating Product

ISSUED DATE :2006/02/21

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-100V

200mꢀ

-8A

GJ08P10

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

*RoHS Compliant

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

-100

Gate-Source Voltage

V_GS

±32

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

-8

-6

=100к

-32

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.36

100

W/к

E_AS

I_AR

Avalanche Current

-8

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.8

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

GJ08P10

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