Datasheet > GI882

GI882

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	236K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GI882 数据手册

ISSUED DATE :2002/12/13

REVISED DATE :2005/08/10B

GTM

CORPORATION

882

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

The GI882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and

relay driver.

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

+150

-55~+150

Unit

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Tstg

VCBO

VCEO

VEBO

Collector Current (Pulse)

Base Current

0.6

Total Power Dissipation(T

=25к)

Electrical Characteristics (Ta = 25ć)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=100uA , I

=1mA, I =0

E=0

E=10uA ,I

CBO

CB=30V, I

EB=3V, I

EBO

*VCE(sat)

*VBE(sat)

0.5

500

=2A, I

=0.2A

C=2A, I

*hFE

100

CE=2V, I

CE=5V, I

=20mA

=1A

MHz

=0.1A, f=100MHz

CB=10V, IE=0, f=1MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

100 - 200

160 - 320

250 - 500

I882

Page: 1/3

12 3

下载PDF

与GI882相关器件

型号	品牌	描述	获取价格	数据表
GI88L02	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI88LS02	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI90T03	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI910	VISHAY	MEDIUM-SWITCHING PLASTIC RECTIFIER	获取价格
GI910/1	VISHAY	Rectifier Diode, 1 Element, 3A, 50V V(RRM)	获取价格
GI910/100	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	获取价格