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GI910/4

更新时间： 2024-11-11 08:26:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 21K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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GI910/4 数据手册

 浏览型号GI910/4的Datasheet PDF文件第2页 
GI910 thru GI917  
Vishay Semiconductors  
formerly General Semiconductor  
Medium-Switching Plastic Rectifier  
Reverse Voltage 500 to 800 V  
Forward Current 3.0 A  
DO-201AD  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High surge current capability  
• Construction utilizes void-free molded plastic technique  
• High forward current operation  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
• Fast switching for high efficiency  
0.190 (4.8)  
DIA.  
• High temperature soldering guaranteed:  
250°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375 (9.5)  
0.285 (7.2)  
Mechanical Data  
Case: JEDEC DO-201AD, molded plastic body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.052 (1.32)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
1.0 (25.4)  
MIN.  
0.048 (1.22)  
DIA.  
Weight: 0.04 oz., 1.1 g  
Packaging codes/options:  
1/Bulk - 1.5K per container, 15K per box  
4/1.4K per 13" reel, 5.6K per box  
23/1K per Ammo. mag., 9K per box  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
GI910  
GI911  
100  
70  
GI912  
GI914  
GI916  
GI918  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
200  
400  
600  
800  
V
35  
140  
280  
420  
560  
V
Maximum DC blocking voltage  
50  
100  
200  
400  
600  
800  
V
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=90°C  
IF(AV)  
3.0  
A
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
100  
A
Typical thermal resistance (1)  
RΘJA  
RΘJL  
22  
8.0  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-50 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
GI910  
GI911  
GI912  
GI914  
GI916  
GI918  
Unit  
Maximum instantaneous forward voltage at 3.0A  
1.25  
1.10  
VF  
V
9.4A, TJ=175°C  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
10  
300  
IR  
trr  
IRM(REC)  
CJ  
µA  
Maximum reverse recovery time at  
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM  
750  
ns  
Maximum reverse recovery time at  
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM  
2.0  
28  
A
Typical junction capacitance at 4.0V, 1MHz  
pF  
Notes: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, with both leads equally heat sink  
Document Number 88631  
22-Mar-02  
www.vishay.com  
1
12

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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