Datasheet > GI31C

GI31C

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	149K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GI31C 数据手册

ISSUED DATE :2005/05/12

REVISED DATE :

GTM

CORPORATION

GI31C

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GI31C is designed for use in general purpose amplifier and switching applications.

Features

*Complementary to GI32C

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Junction Temperature

Symbol

Ratings

Unit

CBO

100

VCEO

EBO

+150

-55 ~ +150

Storage Temperature

TsTG

Total Power Dissipation

(TC

=25к)

Electrical Characteristics (Rating at Ta=25к)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

100

=1mA, I

=30mA, I

=100uA, I

CE=100V, VEB=0V

CE=60V, I =0

EB=5V, I =0

=3A, I =375mA

BVCEO

100

BVEBO

CES

CEO

EBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

1.2

1.8

CE=4V, I

=3A

=1A

=3A

MHz

CE=10V, IC=500mA, f=1MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

I31C

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