GTM CORPORATION
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GBAV70
Description
The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
SOT-23
TPU.34)QBDLBHF*
Style : Pin1.Anode 2. Anode 3. Cathode
Millimeter
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
REF
.
G
H
K
J
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
0.10
0.40
0.85
0̓
0.20
-
1.15
10̓
L
M
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
+150
Unit
ć
Junction Temperature
Storage Temperature
Reverse Voltage
Tstg
-65~+150
80
ć
V
Forward Current
Repetitive Forward Current
Total Power Dissipation
200
500
225
mA
mA
mW
PD
Characteristics at Ta = 25к
Characteristic
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
Min.
Max.
-
Unit
Test Conditions
Reverse Breakdown Voltage
80
-
V
IR=100uA
715
855
1100
1300
5
mV
mV
mV
mV
uA
IF=1mA
-
IF=10mA
IF=50mA
IF=100mA
VR=80V
Forward Voltage
-
-
Reverse Current
Total Capacitance
-
CT
1.5
pF
VR=0, f=1MHz
IF=IR=10mA, RL=100Ө measured at
IR=1Ma,VR=5V
Reverse Recovery Time
Trr
-
15
nS
GTM Product Specification
2004/02/06