Datasheet > G8551

G8551

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	141K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G8551 数据手册

ISSUED DATE :2004/12/27

REVISED DATE :

GTM

CORPORATION

G8551

P N P E P ITAX I A L T R AN S IS T O R

Description

The G8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Features

*High Collector current (IC: 1.5A)

*Complementary to G8051

Package Dimensions

TO-92

SEAT IN G

PL AN E

Millimeter

Min. Max.

Millimeter

Min. Max.

REF.

4.45

1.02

0.36

4.7

0.51

0.76

0.51

4.44

3.30

12.70

4.7

3.81

1.150 1.390

2.42 2.66

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current

Symbol

Ratings

-40

Unit

CBO

VCEO

-25

EBO

-6

-1.5

-0.5

+150

Base Current

Junction Temperature

Storage Temperature Range

Total Power Dissipation

TsTG

-55 ~ +150

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

Min.

-40

-25

-6

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=-100uA

=-2mA

=-100uA

CB=-35V

BE=-6V

CBO

-100

-0.5

-1.2

-1

EBO

*VCE(sat)

*VBE(sat)

*VBE(on)

=-800mA, I

C=-800mA, I

=-80mA

=-10mA

=-5mA

=-100mA

=-800mA

CE=-1V, I

*hFE

120

100

500

MHz

CE=-10V, I =-50mA, f=100MHz

CB=-10V, IE=0, f=1MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

120 ~ 200

160 ~ 320

250 ~ 500

G8551

Page: 1/2

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