Datasheet > G3018

G3018

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	338K
描述
N-CHANNEL MOSFET

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G3018 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/30

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

8ꢀ

G3018

N - C H A N N E L M O S F E T

115mA

Description

N-channel enhancement-mode MOSFET

Features

ԦLow on-resistance.

ԦFast switching speed.

ԦLow voltage drive (2.5V) makes this device ideal for portable equipment.

ԦEasily designed drive circuits.

ԦEasy to parallel.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min.

1.90 REF.

1.00

0.10

0.40

0.85

0°

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Max.

1.30

0.20

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

f20

115

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

I_D@T

I_DM

A=25к

A=100к

800

P_D@T

A=25к

0.225

0.0018

Linear Derating Factor

Operating Junction and Storage Temperature Range

W/ć

Tj, Tstg

-40 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

556

G3018

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