Datasheet > GS1006F

GS1006F

更新时间： 2022-02-26 10:49:01

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	352K
描述
SURFACE MOUNT SILICON RECTIFIER DIODES

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数据手册

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GS1006F 数据手册

GS1000F - GS1010F

SURFACE MOUNT SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

For surface mounted applications

Low profile package

Ideal for automated placement

High temperaturesoldering : 260°C /10

seconds at terminals

Glass Passivated Chip Junction

Mechanical Data

SMAF

Dim Min Max Typ

Case: SMAF,Molded Plastic

Terminals: Solder Plated, Solderable

4.75 4.85

3.68 3.72

4.80

3.70

2.60

1.00

per MIL-STD-750, Method 2026

Polarity:Color band denotes cathode end

Mounting Position:Any

2.57

2.63

0.097 1.03

1.38 1.42 1.40

0.13 0.17 0.15

0.63 0.67 0.65

Weight:0.0018 ounce, 0.064 grams

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

GS1000F GS1002F GS1003F GS1004F GS1006F GS1008F GS1010F

Characteristic

Unit

Marking

Maximum repetitive peak reverse voltage

VRRM

100

200

400

600

800

1000

700

Maximum RMS voltage

VRMS

140

200

280

400

420

600

560

800

Maximum DC blocking voltage

1000

100

V_DC

Maximum average forward rectified current

I(AV)

1.0

25.0

1.1

at TA=65 C (NOTE 1)

Peak forward surge current

8.3ms single half sine-wave superimposed on

IFSM

rated load (JEDEC Method)

TL=25 C

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

10.0

50.0

TA=125 C

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

RθJA

K/W

Operating junction and storage temperature range

TJ,TSTG

-50 to +150

Note:

1.Averaged over any 20ms period.

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

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