Datasheet > GMS24C

GMS24C

更新时间： 2024-02-22 14:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	32K
描述
Transient Suppressor,

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技术参数
数据手册

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GMS24C 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.79	Base Number Matches：	1

GMS24C 数据手册

GMS05C thru GMS24C

Vishay Semiconductors

formerly General Semiconductor

Electrical Characteristics(T_A= 25°C unless otherwise noted)

GMS05C

Parameter

Symbol

V_RWM

V_BR

Minimum

Typical

Maximum

Unit

Reverse Stand-Off Voltage

–

Reverse Breakdown Voltage at I_t= 1mA

Reverse Leakage Current at V_RWM= 5V

I_R

µA

Clamping Voltage at I_PP= 5A, 8/20µs waveform

at I_PP= 24A, 8/20µs waveform

9.8

14.5

V_C

C_j

–

Junction Capacitance between I/O pins and Gnd

V_R= 0V, f = 1MH_Z

325

400

GMS12C

Parameter

Symbol

V_RWM

V_BR

Minimum

Typical

Maximum

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage at I_t= 1mA

Reverse Leakage Current at V_RWM= 12V

–

13.3

–

I_R

µA

Clamping Voltage at I_PP= 5A, 8/20µs waveform

at I_PP= 15A, 8/20µs waveform

V_C

C_j

–

Junction Capacitance between I/O pins and Gnd

V_R= 0V, f = 1MH_Z

135

150

GMS15C

Parameter

Symbol

V_RWM

V_BR

Minimum

Typical

Maximum

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage at I_t= 1mA

Reverse Leakage Current at V_RWM= 15V

–

16.7

–

I_R

µA

Clamping Voltage at I_PP= 5A, 8/20µs waveform

at I_PP= 12A, 8/20µs waveform

V_C

C_j

–

Junction Capacitance between I/O pins and Gnd

V_R= 0V, f = 1MH_Z

100

125

GMS24C

Parameter

Symbol

V_RWM

V_BR

Minimum

Typical

Maximum

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage at I_t= 1mA

Reverse Leakage Current at V_RWM= 24V

–

26.7

–

I_R

µA

Clamping Voltage at I_PP= 5A, 8/20µs waveform

at I_PP= 8A, 8/20µs waveform

V_C

C_j

–

Junction Capacitance between I/O pins and Gnd

V_R= 0V, f = 1MH_Z

All

Parameter

Symbol

Minimum

Typical

Maximum

Unit

Peak Forward Voltage at I_F= 1A, 8/20µs Waveform

V_F

–

1.5

–

www.vishay.com

Document Number 88346

17-May-02

123

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