Datasheet > GM9452

GM9452

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	344K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GM9452 数据手册

Pb Free Plating Product

ISSUED DATE :2005/09/14

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

20V

50mΩ

GM9452

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GM9452 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Low Gate Charge

*Capable of 2.5V Gate Drive

Package Dimensions

SOT-89

Millimeter

Min. Max.

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

f16

Gate-Source Voltage

V_GS

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

=25к

A=70к

2.5

I_DM

P_D@T

=25к

Total Power Dissipation

1.25

0.01

-55 ~ +150

Linear Derating Factor

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

100

ć/W

GM9452

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