Datasheet > GM965

GM965

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	191K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GM965 数据手册

ISSUED DATE :2004/04/16

REVISED DATE :2004/12/08B

GTM

CORPORATION

GM965

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

he GM965 is designed for use as AF output amplifier and flash unit.

Package Dimensions

SOT-89

Millimeter

REF.

Millimeter

REF.

Min.

4.4

Max.

4.6

Min.

3.00 REF.

1.50 REF.

Max.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Junction Temperature

Symbol

Ratings

+150

Unit

Storage Temperature

Tstg

-55 ~ +150

Absolute Maximum Ratings at Ta = 25к

Collector to Base Voltage

BVCBO

BVCEO

BVEBO

7.0

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (Continuous)

Collector Current (Peak PT=10mS)

Total Power Dissipation at Ta = 25к

1.2

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=100uA

BVCEO

BVEBO

ICBO

IC=1mA

IE=10uA

0.1

VCB=60V

IEBO

VEB=7V

*VCE(sat)

230

150

0.35

IC=3A, IB=0.1A

VCE=2V, IC=0.5A

VCE=2V, IC=2A

VCE=6V, IE=50mA

VCB=20V, f=1MHz

*hFE

800

150

MHz

Cob

* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

Classification Of hFE

Rank

Range

230-380

340-600

560-800

GM965

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