Datasheet > GM76U256CLLE-12

GM76U256CLLE-12

更新时间： 2024-01-30 18:40:04

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
11页	175K
描述
x8 SRAM

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数据手册

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GM76U256CLLE-12 数据手册

GM76U256C Series

DC CHARACTERISTICS

Vcc = 3.0V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.

Symbol

ILI

ILO

Parameter

Input Leakage Current

Output Leakage Current

Test Condition

Vss < VIN < Vcc

Vss < VOUT < Vcc, /CS = VIH or

/OE = VIH or /WE = VIL

/CS = VIL,

VIN = VIH or VIL, II/O = 0mA

/CS = VIL, VIN = VIH or VIL,

Min. Duty Cycle = 100%, II/O = 0mA

/CS = VIL, VIN = VIH or VIL,

Cycle = 1us , II/O = 0mA

/CS= VIH,

Min. Typ. Max. Unit

-1

Icc

Operating Power Supply

Current

Average Operating Current

ICC1

ICC2

ISB

Average Operating Current

TTL Standby Current

(TTL Inputs)

0.3

VIN = VIH or VIL

ISB1

CMOS Standby Current

(CMOS Inputs)

/CS > Vcc - 0.2V

VIN > Vcc - 0.2V or

VIN < Vss + 0.2V

0.4

LLE

VOL

VOH

Output Low Voltage

Output High Voltage

IOL = 2.1mA

IOH = -1.0mA

2.4

Note : Typical values are at Vcc =3.0V, TA = 25°C

AC CHARACTERISTICS(I)

Vcc = 3.0V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.

-10

Max. Min

-12

Max.

Unit

Symbol

Parameter

Min.

READ CYCLE

tRC

tAA

tACS

tOE

tCLZ

tOLZ

tCHZ

tOHZ

tOH

Read Cycle Time

Address Access Time

Chip Select Access Time

Output Enable to Output Valid

Chip Select to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Out Disable to Output in High Z

Output Hold from Address Change

100

120

WRITE CYCLE

10 tWC

11 tCW

12 tAW

13 tAS

14 tWP

15 tWR

16 tWHZ

17 tDW

18 tDH

19 tOW

Write Cycle Time

100

120

100

Chip Selection to End of Write

Address Valid to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Active from End of Write

Rev 02 / Apr. 2001

1 2 345 6 7...11

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