Datasheet > GM71CS18163CLJ-5

GM71CS18163CLJ-5

更新时间： 2022-01-19 14:49:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
11页	114K
描述
x16 EDO Page Mode DRAM

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数据手册

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GM71CS18163CLJ-5 数据手册

GM71C18163C

GM71CS18163CL

DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)

Symbol

Parameter

Min Max Unit Note

Output Level

Output "H" Level Voltage (IOUT = -2mA)

2.4

Output Level

Output "L" Level Voltage (IOUT = 2mA)

0.4

Operating Current

Average Power Supply Operating Current

(RAS, UCAS or LCAS Cycling: tRC = tRC min)

CC1

50ns

60ns

70ns

190

170

1, 2

150

CC2

CC3

Standby Current (TTL)

Power Supply Standby Current

(RAS, UCAS, LCAS = VIH, DOUT = High-Z)

50ns

190

170

150

185

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

60ns

70ns

50ns

CC4

EDO Page Mode Current

Average Power Supply Current

EDO Page Mode

1, 3

60ns

70ns

165

145

(tHPC = tHPC min)

Standby Current (CMOS)

Power Supply Standby Current

(RAS, UCAS or LCAS >=VCC - 0.2V, DOUT = High-Z)

CC5

CC6

150

50ns

60ns

70ns

190

170

CAS-before-RAS Refresh Current

(tRC = tRC min)

150

500

Battery Back Up Operating Current(Standby with CBR Ref.)

(CBR refresh, tRC=125us, tRAS<=0.3us,

CC7

CC8

4,5

OUT=High-Z, CMOS interface)

Standby Current RAS = VIH

UCAS, LCAS = VIL

OUT = Enable

Self-Refresh Mode Current

(RAS, UCAS or LCAS <=0.2V, DOUT=High-Z, CMOS interface)

CC9

300

L(I)

Input Leakage Current

Any Input (0V<=VIN<= 6V)

-10

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

L(O)

Note: 1. ICC depends on output load condition when the device is selected.

CC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL

3. Address can be changed once or less while UCAS and LCAS = VIH

4. CAS = L (<=0.2V) while RAS = L (<=0.2V).

5. L-version.

Rev 0.1 / Apr’01

1 2 345 6 7...11

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