Datasheet > GI4672

GI4672

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	162K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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数据手册

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GI4672 数据手册

ISSUED DATE :2005/07/15

REVISED DATE :

GTM

CORPORATION

4672

N P N E P I T A X I A L S I L I C O N T R A N S I S T O R

Description

The GI4672 is designed for low frequency amplifier applications.

Features

ԦLow saturation voltage, typically VCE(sat) =0.1V at I

ԦExcellent DC current gain characteristics

Package Dimensions

C/I

B=1A/50mA

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

CBO

CEO

EBO

Collector Current (DC)

Collector Current (Pulse PW=10ms)

1.5

Total Device Dissipation (T

Junction Temperature

=25к)

150

Storage Temperature

stg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=50uA, I

=50mA

=500mA

=500mA, f=100MHz

=0, f=1MHz

BVCEO

BVEBO

=1mA, IB

E=50uA, IC

CBO

100

0.35

400

CB=60V, IE

EBO

EB=5V, I

=1A, I

*VCE(sat)

*hFE

0.1

120

CE=2V, I

210

MHz

CE=2V, IE

Cob

CB=10V, IE

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

120 ~ 240

200 ~ 400

I4672

Page: 1/2

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