Datasheet > GI250-1

GI250-1

更新时间： 2024-01-19 17:58:14

品牌	Logo	应用领域
威世 - VISHAY		二极管高压
页数	文件大小	规格书
4页	103K
描述
High Voltage Glass Passivated Junction Rectifier

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GI250-1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	3.5 V
最大非重复峰值正向电流：	15 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	0.25 A
最大重复峰值反向电压：	1000 V	子类别：	Rectifier Diodes
表面贴装：	NO

GI250-1 数据手册

GI250-1 thru GI250-4

Vishay General Semiconductor

High Voltage Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

• Cavity-free glass-passivated junction

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 260 °C, 40 s

*Glass Encapsulation

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

DO-204AL (DO-41)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in rectification of high voltage power supplies,

inverters, converters and freewheeling diodes

application.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

I_R

0.25 A

1000 V to 4000 V

15 A

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL 94V-0 flammability rating

5.0 µA

V_F

3.5 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

T_Jmax.

175 °C

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

GI250-1

1000

700

GI250-2

2000

GI250-3

3000

GI250-4

4000

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

1400

2100

2800

Maximum DC blocking voltage

V_DC

1000

2000

3000

4000

Maximum average forward rectified current 0.375" (9.5 mm) lead

length at T_A= 75 °C

I_F(AV)

0.25

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number: 88625

Revision: 03-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

下载PDF

与GI250-1相关器件

型号	品牌	描述	获取价格	数据表
GI250-1/100	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
GI250-1/4F	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
GI250-1/4G	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
GI250-1/53	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
GI250-1/54	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
GI250-1/56	VISHAY	Rectifier Diode, 1 Element, 0.25A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格