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GI2401HE3/45 PDF预览

GI2401HE3/45

更新时间： 2024-02-24 05:48:59
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
4页 114K
描述
DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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GI2401HE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.72
其他特性：FREE WHEELING DIODE, HIGH RELIABILITY应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.8 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：125 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：50 V最大反向恢复时间：0.035 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

GI2401HE3/45 数据手册

 浏览型号GI2401HE3/45的Datasheet PDF文件第2页浏览型号GI2401HE3/45的Datasheet PDF文件第3页浏览型号GI2401HE3/45的Datasheet PDF文件第4页 
GI2401, GI2402, GI2403, GI2404  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
• Power pack  
TO-220AB  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max., 10 s per JESD 22-B106  
• AEC-Q101 qualified  
3
2
• Material categorization: For definitions of compliance  
1
please see www.vishay.com/doc?99912  
PIN 1  
PIN 3  
PIN 2  
CASE  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, inverters, freewheeling diodes, DC/DC converters,  
and other power switching application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
16 A  
Case: TO-220AB  
VRRM  
IFSM  
50 V, 100 V, 150 V, 200 V  
125 A  
Molding compound meets UL 94V-0 flammability rating  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
trr  
35 ns  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VF at IF  
0.895 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
TJ max.  
Package  
Diode variation  
150 °C  
TO-220AB  
Common cathode  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VRMS  
GI2401  
50  
GI2402  
100  
GI2403  
150  
GI2404  
200  
UNIT  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
V
V
V
A
35  
70  
105  
140  
Max. DC blocking voltage  
VDC  
50  
100  
150  
200  
Max. average forward rectified current at TC = 100 °C  
IF(AV)  
16  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
125  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
GI2401  
GI2402  
GI2403  
GI2404  
UNIT  
IF = 4 A  
IF = 8 A  
IF = 4 A  
IF = 8 A  
TJ = 25 °C  
TJ = 25 °C  
TJ = 100 °C  
TJ = 100 °C  
0.900  
0.975  
0.800  
0.895  
Max. instantaneous forward voltage  
per diode  
VF  
V
T
C = 25 °C  
TC = 100 °C  
IF = 0 .5 A, IR = 1.0 A,  
rr = 0.25A  
4.0 V, 1 MHz  
50  
5.0  
Max. DC reverse current at rated DC  
blocking voltage per diode  
IR  
μA  
150  
500  
Max. reverse recovery time  
per diode  
trr  
35  
85  
ns  
I
Typical junction capacitance per diode  
CJ  
pF  
Revision: 20-Aug-13  
Document Number: 88624  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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