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GBJ10A-LF PDF预览

GBJ10A-LF

更新时间: 2024-01-12 12:36:54
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
4页 82K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ-4, 4 PIN

GBJ10A-LF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
其他特性:HIGH RELIABILITY, UL RECOGNIZED最小击穿电压:50 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

GBJ10A-LF 数据手册

 浏览型号GBJ10A-LF的Datasheet PDF文件第1页浏览型号GBJ10A-LF的Datasheet PDF文件第3页浏览型号GBJ10A-LF的Datasheet PDF文件第4页 
100  
12  
10  
8
T = 25°C  
j
10  
6
4
2
0
1.0  
0.1  
Resistive or  
Inductive load  
Pulse width = 300µs  
0
25  
50  
75  
100  
125  
150  
0.0 0.2  
0.6  
1.0  
1.8  
1.4  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Fwd Characteristics  
T , TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
100  
10  
1
Tj = 25°C  
f = 1.0MHz  
Single half-sine-wave  
(JEDEC method)  
200  
Tj = 25°C  
150  
100  
50  
0
1
100  
10  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
GBJ10A – GBJ10M  
2 of 4  
© 2006 Won-Top Electronics  

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