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G2308E PDF预览

G2308E

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 330K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G2308E 数据手册

 浏览型号G2308E的Datasheet PDF文件第1页浏览型号G2308E的Datasheet PDF文件第2页浏览型号G2308E的Datasheet PDF文件第3页 
ISSUED DATE :2006/01/16  
REVISED DATE :  
GTM  
CORPORATION  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
Important Notice:  
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.  
GTM reserves the right to make changes to its products without notice.  
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.  
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.  
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785  
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China  
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165  
G2308E  
Page: 4/4  

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