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G1422F2U

更新时间： 2024-01-27 22:35:16
品牌 Logo 应用领域
致新 - GMT 音频放大器
页数 文件大小 规格书
15页 300K
描述
2W Stereo Audio Amplifier

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G1422F2U 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：TSSOP, TSSOP20,.25Reach Compliance Code：compliant
风险等级：5.77商用集成电路类型：AUDIO AMPLIFIER
JESD-30 代码：R-PDSO-G20功能数量：2
端子数量：20最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP20,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源：5 V认证状态：Not Qualified
子类别：Audio/Video Amplifiers最大压摆率：15 mA
表面贴装：YES温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.635 mm
端子位置：DUALBase Number Matches：1

G1422F2U 数据手册

 浏览型号G1422F2U的Datasheet PDF文件第1页浏览型号G1422F2U的Datasheet PDF文件第3页浏览型号G1422F2U的Datasheet PDF文件第4页浏览型号G1422F2U的Datasheet PDF文件第5页浏览型号G1422F2U的Datasheet PDF文件第6页浏览型号G1422F2U的Datasheet PDF文件第7页 
G1422  
Global Mixed-mode Technology Inc.  
Absolute Maximum Ratings  
Supply Voltage, VCC…………………..…...…….……...6V  
Operating Ambient Temperature Range  
Power Dissipation (1)  
TA ≤ 25°C………………………………………….2.7W  
TA ≤ 70°C………………………………………….1.7W  
TA ≤ 85°C………………….………………………1.4W  
Electrostatic Discharge, VESD  
TA…….…………………………….……….-40°C to +85°C  
Maximum Junction Temperature, TJ…..……….….150°C  
Storage Temperature Range, TSTG….…-65°C to+150°C  
Reflow Temperature (soldering, 10sec)….……..260°C  
Human body mode..………………….…-3000 to 3000(2)  
Note:  
(1) : Recommended PCB Layout  
(2) : Human body model : C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses  
Electrical Characteristics  
DC Electrical Characteristics, VDD = 5.0V, TA=+25°C, unless otherwise noted  
PARAMETER  
Supply Current  
SYMBOL  
CONDITION  
Stereo BTL  
STEREO SE  
MIN TYP MAX UNIT  
---  
---  
---  
---  
4
8.5  
4
15  
8
IDD  
VDD = 5V  
mA  
DC Differential Output Voltage  
IDD in Shutdown  
VO(DIFF)  
ISD  
VDD = 5V,Gain = 2  
VDD = 5V  
5
50  
2
mV  
µA  
V
0.1  
---  
---  
Headphone High Input Voltage  
Headphone Low Input Voltage  
VIH  
---  
0.8  
VIL  
---  
V
(AC Operation Characteristics, VDD = 5.0V, TA=+25°C, RL = 4Ω, unless otherwise noted)  
PARAMETER  
SYMBOL  
CONDITION  
THD = 1%, BTL, RL = 4Ω  
THD = 1%, BTL, RL = 8Ω  
THD = 10%, BTL, RL = 4Ω  
THD = 10%, BTL, RL = 8Ω  
THD = 1%, SE, RL = 4Ω  
THD = 1%, SE, RL = 8Ω  
THD = 10%, SE, RL = 4Ω  
THD = 10%, SE, RL L = 8Ω  
THD = 0.5%, SE, RL = 32Ω  
PO = 1.6W, BTL, RL = 4Ω  
PO = 1W, BTL, RL = 8Ω  
PO = 75mW, SE, RL = 32Ω  
VI = 1V, RL = 10KΩ, G = 1, SE  
G = 1, THD = 1%  
MIN TYP MAX UNIT  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
2
1.25  
2.5  
1.6  
550  
340  
700  
440  
92  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
W
Output power (each channel) see Note  
P(OUT)  
mW  
300  
100  
15  
Total harmonic distortion plus noise  
THD+N  
m%  
2.5  
20  
Maximum output power bandwidth  
Phase margin  
BOM  
kHz  
°
RL = 4Ω, Open Load  
65  
Power supply ripple rejection  
Channel-to-channel output separation  
Input separation  
PSRR  
f = 120Hz  
75  
dB  
f = 1kHz  
80  
dB  
80  
dB  
BTL attenuation in SE mode  
Input impedance  
85  
dB  
ZI  
2
MΩ  
dB  
Signal-to-noise ratio  
PO = 500mW, BTL  
90  
Output noise voltage  
Vn  
Output noise voltage  
55  
µV (rms)  
Note :Output power is measured at the output terminals of the IC at 1kHz.  
TEL: 886-3-5788833  
http://www.gmt.com.tw  
Ver: 1.2  
Jun 29, 2005  
2
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