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FTF3020-M PDF预览

FTF3020-M

更新时间: 2024-01-25 15:49:38
品牌 Logo 应用领域
恩智浦 - NXP 传感器图像传感器
页数 文件大小 规格书
16页 225K
描述
Full Frame CCD Image Sensor

FTF3020-M 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.61
水平像素:3120安装特点:THROUGH HOLE MOUNT
最高工作温度:60 °C最低工作温度:-40 °C
像素大小:12X12 µm子类别:CCD Image Sensors
表面贴装:NO垂直像素:2060
Base Number Matches:1

FTF3020-M 数据手册

 浏览型号FTF3020-M的Datasheet PDF文件第2页浏览型号FTF3020-M的Datasheet PDF文件第3页浏览型号FTF3020-M的Datasheet PDF文件第4页浏览型号FTF3020-M的Datasheet PDF文件第6页浏览型号FTF3020-M的Datasheet PDF文件第7页浏览型号FTF3020-M的Datasheet PDF文件第8页 
Philips Semiconductors  
Product specification  
Full Frame CCD Image Sensor  
FTF3020-M  
Specifications  
ABSOLUTE MAXIMUM RATINGS1  
MIN.  
MAX.  
UNIT  
GENERAL:  
storage temperature  
-55  
-40  
-20  
-0.2  
0
+80  
+60  
+20  
+2.0  
10  
°C  
°C  
V
µA  
mA  
ambient temperature during operation  
voltage between any two gates  
DC current through any clock phase (absolute value)  
OUT current (no short circuit protection)  
VOLTAGES IN RELATION TO VPS:  
VNS, SFD, RD  
VCS, SFS  
-0.5  
-8  
-5  
+30  
+5  
+25  
V
V
V
all other pins  
VOLTAGES IN RELATION TO VNS:  
SFD, RD  
VCS, SFS, VPS  
-15  
-30  
-30  
+0.5  
+0.5  
+0.5  
V
V
V
all other pins  
DC CONDITIONS2  
MIN. [V]  
TYPICAL [V]  
MAX. [V]  
MAX. [mA]  
15  
15  
4.5  
1
-
-
-
VNS3  
VPS  
SFD  
SFS  
VCS  
OG  
N substrate  
P substrate  
18  
1
16  
0
24  
3
20  
0
0
6.5  
15.5  
28  
7
24  
0
Source Follower Drain  
Source Follower Source  
Current Source  
Output Gate  
-5  
4
3
8
RD  
Reset Drain  
13  
18  
AC CLOCK LEVEL CONDITIONS2  
MIN.  
TYPICAL  
MAX.  
UNIT  
IMAGE CLOCKS:  
A-clock amplitude during integration and hold  
A-clock amplitude during vertical transport (duty cycle=5/8)4  
A-clock low level  
8
10  
10  
14  
0
V
V
V
V
Charge Reset (CR) level on A-clock 5  
-5  
-5  
OUTPUT REGISTER CLOCKS:  
C-clock amplitude (duty cycle during hor. transport = 3/6)  
C-clock low level  
Summing Gate (SG) amplitude  
Summing Gate (SG) low level  
4.75  
2
5
5.25  
10  
V
V
V
V
3.5  
10  
3.5  
OTHER CLOCKS:  
Reset Gate (RG) amplitude  
Reset Gate (RG) low level  
Charge Reset (CR) pulse on Nsub  
5
0
10  
3
10  
10  
10  
V
V
V
5
1 During Charge Reset it is allowed to exceed maximum rating levels (see note 5).  
2 All voltages in relation to SFS.  
3 To set the VNS voltage for optimal Vertical Anti-Blooming (VAB), it should be adjustable between minimum and maximum values.  
4 Three-level clock is preferred for maximum charge; the swing during vertical transport should be 4V higher than the voltage during integration.  
A two level clock (typically 10V) can be used if a lower maximum charge handling capacity is allowed.  
5 Charge Reset can be achieved in two ways:  
• The typical A-clock low level is applied to all image clocks; for proper CR, an additional Charge Reset pulse on VNS is required (preferred).  
• The typical CR level is applied to all image clocks simultaneously.  
1999 November  
5

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